View US6M1_1332881.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

US6M1
Transistors
Small switching
US6M1
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TUMT6). External dimensions (Unit : mm)
TUMT6
0.2
2.00.1 0.3 +0.1 -0.05
(6) (5) (4)
2.10.1 1.70.1
0.2
Application Power switching, DC / DC converter.
0~0.1
(1) (2) (3)
1pin mark
0.65 0.65 1.30.1
0.170.05 Each lead has same dimensions
Abbreviated symbol : M01
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Source current (Body diode) Pulsed Total power dissipation (TC=25C) Channel temperature Storage temperature Drain current Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits Tr1 : Nchannel Tr2 : Pchannel 30 -20 20 -12 1 1.4 4 5.6 0.6 -0.4 5.6 -4 1 1 150 150 -55 to +150 -55 to +150 Unit V V A A A A W C C
Equivalent circuit
(6) (5) 2 (4) (6) (5) (4)
1 1 2
1
1 (1) 2 (2) (3)
0.2MAX
(1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain
0.85MAX 0.770.05
(1)
(2)
(3)
1 Pw10s, Duty cycle1% 2 With each pin mounted on the recommended lands.
1 ESD PROTECTION DIODE 2 BODY DIODE
Thermal resistance (Ta=25C)
Parameter Channel to ambient Symbol Rth (ch-A) Limits 125 Unit C / W
1/7
US6M1
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd
Min. - 30 - 1.0 - - - 1.0 - - - - - - - - - -
Typ. - - - - 170 250 270 - 70 15 12 6 6 13 8 1.4 0.6 0.3
Max. 10 - 1 2.5 240 350 380 - - - - - - - - 2.0 - -
Unit A V A V m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=1.4A, VGS=10V ID=1.4A, VGS=4.5V ID=1.4A, VGS=4V ID=1.4A, VDS=10V VDS=10V VGS=0V f=1MHz ID=0.7A, VDD 15V VGS=10V RL=21 RGS=10 VDD 15V RL 10.7 VGS=5V RGS=10 ID=1.4A
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Test Conditions IS=1.4A, VGS=0V
2/7
US6M1
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -20 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -0.7 - Static drain-source on-state - RDS (on) resistance - Yfs 0.7 Forward transfer admittance - Input capacitance Ciss Output capacitance - Coss Reverse transfer capacitance - Crss Turn-on delay time - td (on) Rise time - tr Turn-off delay time - td (off) Fall time - tf Total gate charge - Qg Gate-source charge - Qgs Gate-drain charge - Qgd
Pulsed
Typ. - - - - 280 310 570 - 150 20 20 9 8 25 10 2.1 0.5 0.5
Max. 10 - -1 -2.0 390 430 800 - - - - - - - - - - -
Unit A V A V m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=12V, VDS=0V ID= -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, ID= -1mA ID= -1A, VGS= -4.5V ID= -1A, VGS= -4V ID= -0.5A, VGS= -2.5V ID= -0.5A, VDS= -10V VDS= -10V VGS=0V f=1MHz ID= -0.5A, VDD -15V VGS= -4.5V RL=30 RGS=10 VDD -15V RL=15 VGS= -4.5V RGS=10 ID= -1A
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. -1.2
Unit V
Test Conditions IS= -0.4A, VGS=0V
3/7
US6M1
Transistors
N-ch Electrical characteristic curves
1000
100
Crss Coss
Ciss
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
tf
100
td (off)
10
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25C f=1MHz VGS=0V
1000
Ta=25C VDD=15V VGS=4.5V RG=10 Pulsed
6
Ta=25C VDD=15V 5 ID=1.5A RG=10 Pulsed 4 3 2 1 0
10
td (on) tr
1 0.01
0.1
1
10
100
1 0.01
0.1
1
10
0
0.5
1
1.5
2
DRAIN-SOURCE VOLTAGE : VDS (A)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
10
1.0
10
Ta=25C Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
VDS=10V Pulsed
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7
ID=1.5A ID=0.75A
VGS=0V Pulsed
SOURCE CURRENT : Is (A)
DRAIN CURRENT : ID (A)
1
Ta=125C Ta=75C Ta=25C Ta= -25C
1
Ta=125C Ta=75C Ta=25C Ta= -25C
0.1
0.1
0.01
0.001 0.0
0.5
1.0
1.5
2.0
2.5
8
9
10
0.01 0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Source Current vs. Source-Drain Voltage
10
10
10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
1
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
VGS=4.5V Pulsed
VGS=4.0V Pulsed
VGS=2.5V Pulsed
1
Ta=125C Ta=75C Ta=25C Ta= -25C
1
Ta=125C Ta=75C Ta=25C Ta= -25C
0.1 0.01
0.1
1
10
0.1 0.01
0.1
1
10
0.1 0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ()
4/7
US6M1
Transistors
P-ch Electrical characteristic curves
1000
GATE-SOURCE VOLTAGE : -VGS (V)
Ta=25C f=1MHz VGS=0V
10000
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1000
Ta=25C VDD= -15V VGS= -4.5V RG=10 Pulsed
8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2
Ta=25C VDD= -15V ID= -1A RG=10 Pulsed
tf
100
Ciss
100
td (off) td (on) tr
10
Crss Coss
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
2.5
3
DRAIN-SOURCE VOLTAGE : -VDS (V)
DRAIN CURRENT : -ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
REVERSE DRAIN CURRENT : -IS (A)
10
DRAIN CURRENT : -ID (A)
Ta=25C VDS= -10V Pulsed
1000 Ta=25C Pulsed 750
ID= -1A ID= -0.5A
10 VGS=0V Pulsed
1
1
0.1
500
Ta=125C Ta=75C Ta=25C Ta= -25C
0.1
0.01
250
0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
0
0
2
4
6
8
10
12
0.01 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
GATE-SOURCE VOLTAGE : -VGS (V)
GATE-SOURCE VOLTAGE : -VGS (V)
SOURCE-DRAIN VOLTAGE : -VSD (V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Source Current vs. Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VGS= -4.5V Pulsed
VGS= -4V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10000
10000
10000
VGS= -2.5V Pulsed
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
100 0.01
0.1
1
10
100 0.01
0.1
1
10
100 0.01
0.1
1
10
DRAIN CURRENT : -ID (A)
DRAIN CURRENT : -ID (A)
DRAIN CURRENT : -ID (A)
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ()
5/7
US6M1
Transistors
N-ch Measurement circuit
Pulse Width
VGS ID RL D.U.T. RG VDD VDS
VGS VDS
50% 10% 10% 90% td(on) ton tr
90%
50% 10% 90%
td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
VGS ID RL IG(Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
6/7
US6M1
Transistors
P-ch Measurement circuit
Pulse Width
VGS ID RL D.U.T. RG VDD VDS
VGS
10% 50% 10%
90%
50% 10% 90%
VDS
90% td(on) ton tr td(off) toff
tf
Fig.3-1 Switching Time Measurement Circuit
Fig.3-2 Switching Waveforms
VG
VGS ID RL IG(Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.4-1 Gate Charge Measurement Circuit
Fig.4-2 Gate Charge Waveform
7/7
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

▲Up To Search▲

Price & Availability of US6M1

	To Download US6M1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .